隨著技術(shù)發(fā)展,第三代半導(dǎo)體功率器件開始由實驗室階段步入商業(yè)應(yīng)用,未來應(yīng)用潛力巨大,這些新型器件測試要求更高的電壓和功率水平,更快的開關(guān)時間。
測試周期:
根據(jù)標(biāo)準、試驗條件及被測樣品量確定
產(chǎn)品范圍:
MOSFET、IGBT、DIODE、BJT,第三代半導(dǎo)體器件等分立器件,以及上述元件構(gòu)成的功率模塊
測試項目:
靜態(tài)參數(shù) |
符號 |
Drain to Source Breakdown Voltage |
BVDSS |
Drain Leakage Current |
IDSS |
Gate Leakage Current |
IGSS |
Gate Threshold Voltage |
VGS(th) |
Drain to Source On Resistance |
RDS(on) |
Drain to Source On Voltage |
VDS(on) |
Body Diode Forward Voltage |
VSD |
Internal Gate Resistance |
Rg |
Input capacitance |
Cies |
Output capacitance |
Coes |
Reverse transfer capacitance |
Cres |
Transconductance |
gfs |
Gate to Source Plateau Voltage |
Vgs(pl) |
動態(tài)參數(shù) |
符號 |
Turn-on delay time |
td(on) |
Rise time |
tr |
Turn-off delay time |
td(off) |
Fall time |
tf |
Turn-on energy |
Eon |
Turn-off energy |
Eoff |
Diode reverse recovery time |
trr |
Diode reverse recovery charge |
Qrr |
Diode peak reverse recovery current |
Irrm |
Diode peak rate of fall of reverse
recovery current |
dirr/dt |
Total gate charge |
QG |
Gate-Emitter charge |
QGC |
Gate-Collector charge |
QGE |
其他參數(shù) |
符號 |
thermal resistance |
Rth |
Unclamped Inductive Switching |
UIS |
Reverse biased safe operating area |
RBSOA |
Short circuit safe operation area |
SCSOA |